PJSEMI PJMG220N40DN

PJSEMI · FETs & Power MOSFETs · MPN PJMG220N40DN

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Specifications

Gate Charge(Qg)103nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.913nF
Current - Continuous Drain(Id)220A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation114W
Reverse Transfer Capacitance (Crss@Vds)148pF
RDS(on)1.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.509nF
TypeN-Channel

Technical details

40V 220A 2V 114W 1.2mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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