PJSEMI · FETs & Power MOSFETs · MPN PJMG200N60DN
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 101nC@10V |
| Output Capacitance(Coss) | 1.543nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 101W |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.324nF |
| Type | N-Channel |
60V 160A 2.5V 101W 2.5mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS