PJSEMI PJMG150N30DN

PJSEMI · FETs & Power MOSFETs · MPN PJMG150N30DN

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)1.87nF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.42nF
TypeN-Channel

Technical details

30V 150A 2.5V 78W 1.9mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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