PJSEMI PJMG12H90HNDN

PJSEMI · FETs & Power MOSFETs · MPN PJMG12H90HNDN

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage120V
Output Capacitance(Coss)815pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.712nF
TypeN-Channel

Technical details

120V 90A 3.6V 125W 8.5mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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