PJSEMI PJMG10P60SQ

PJSEMI · FETs & Power MOSFETs · MPN PJMG10P60SQ

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)9.86nC@4.5V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)110mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)515pF

Technical details

P-Channel 60V 10A 1.5W Surface Mount SOT-89

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