PJSEMI · FETs & Power MOSFETs · MPN PJMG10H60NDN
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 866pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.542nF |
| Type | N-Channel |
100V 60A 2.5V 78W 13mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS