PJSEMI PJMG10H45NTE

PJSEMI · FETs & Power MOSFETs · MPN PJMG10H45NTE

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation72W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)22mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.187nF
TypeN-Channel

Technical details

N-Channel 100V 45A 72W Surface Mount TO-252

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