PJSEMI · FETs & Power MOSFETs · MPN PJMG10H35PDN
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 620pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 97W |
| RDS(on) | 46.3mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.23nF |
| Type | P-Channel |
100V 35A 2.6V 97W 46.3mΩ@10V 1 P-Channel P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS