PJSEMI PJMG10H13PSQ

PJSEMI · FETs & Power MOSFETs · MPN PJMG10H13PSQ

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)60nC@10V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.35W
Reverse Transfer Capacitance (Crss@Vds)15.5pF
RDS(on)165mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)725pF

Technical details

P-Channel 100V 13A 1.35W Surface Mount SOT-89

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