PJSEMI · FETs & Power MOSFETs · MPN PJMG10H100HNDN
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| Gate Charge(Qg) | 29nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 985pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 147W |
| RDS(on) | 8.4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.757nF |
| Type | N-Channel |
100V 100A 3.6V 147W 8.4mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS