PJSEMI PJMG100N40DN

PJSEMI · FETs & Power MOSFETs · MPN PJMG100N40DN

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)95A
Output Capacitance(Coss)523pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation59.5W
RDS(on)3.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)35pF
Number1 N-channel
Input Capacitance(Ciss)1.815nF
TypeN-Channel

Technical details

40V 95A 2V 59.5W 3.9mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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