PJSEMI · FETs & Power MOSFETs · MPN PJMD60H12TNSA
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| Gate Charge(Qg) | 1.14nC |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 30mA |
| Operating Temperature - | -55℃~+150℃@(Tj) |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 160Ω |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 24pF |
600V 30mA 2.5V 500mW 160Ω 1 N-channel SOT-23 Single FETs, MOSFETs RoHS