PJSEMI PJM90H09NTF

PJSEMI · FETs & Power MOSFETs · MPN PJM90H09NTF

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Specifications

Gate Charge(Qg)49nC@10V
Drain to Source Voltage900V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation67W
Reverse Transfer Capacitance (Crss@Vds)146pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.593nF

Technical details

N-Channel 900V 9A 67W Through Hole TO-220F

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