PJSEMI PJM80N68TE

PJSEMI · FETs & Power MOSFETs · MPN PJM80N68TE

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage68V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation147W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)8.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.05nF

Technical details

N-Channel 68V 80A 147W Surface Mount TO-252

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