PJSEMI PJM80N40DN

PJSEMI · FETs & Power MOSFETs · MPN PJM80N40DN

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)59nC@10V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)225pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)192pF
RDS(on)5.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.183nF
TypeN-Channel

Technical details

40V 80A 2.5V 50W 5.2mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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