PJSEMI PJM80N30DN

PJSEMI · FETs & Power MOSFETs · MPN PJM80N30DN

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)37nC@10V
Current - Continuous Drain(Id)70A
Output Capacitance(Coss)235pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation42W
RDS(on)5.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)203pF
Number1 N-channel
Input Capacitance(Ciss)2.106nF
TypeN-Channel

Technical details

30V 70A 2V 42W 5.1mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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