PJSEMI PJM80N30DL

PJSEMI · FETs & Power MOSFETs · MPN PJM80N30DL

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)58nC@10V
Output Capacitance(Coss)372pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)302pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.089nF
TypeN-Channel

Technical details

30V 80A 2.5V 39W 4mΩ@10V 1 N-channel N-Channel PDFN-8L(3x3) Single FETs, MOSFETs RoHS

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