PJSEMI PJM65N40DN

PJSEMI · FETs & Power MOSFETs · MPN PJM65N40DN

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)65A
Output Capacitance(Coss)192pF
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation33.7W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF
TypeN-Channel

Technical details

40V 65A 2.5V 33.7W 9mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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