PJSEMI PJM65H0D5NSA

PJSEMI · FETs & Power MOSFETs · MPN PJM65H0D5NSA

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)800pC@10V
Output Capacitance(Coss)1.5pF
Current - Continuous Drain(Id)50mA
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.39W
RDS(on)175Ω@10V
Reverse Transfer Capacitance (Crss@Vds)0.6pF
Number1 N-channel
Input Capacitance(Ciss)8.8pF
Vgs±20V

Technical details

N-Channel 650V 50mA 1.39W Surface Mount SOT-23-3

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