PJSEMI PJM65DN30DN

PJSEMI · FETs & Power MOSFETs · MPN PJM65DN30DN

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)37nC@10V
Current - Continuous Drain(Id)65A
Output Capacitance(Coss)225pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)192pF
RDS(on)6.5mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.94nF
TypeN-Channel

Technical details

30V 65A 2V 40W 6.5mΩ@10V 2 N-Channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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