PJSEMI PJM60N60TE

PJSEMI · FETs & Power MOSFETs · MPN PJM60N60TE

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Specifications

Gate Charge(Qg)77nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)201pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)173pF
RDS(on)14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.018nF

Technical details

N-Channel 60V 60A 70W Surface Mount TO-252

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