PJSEMI PJM60N20TE

PJSEMI · FETs & Power MOSFETs · MPN PJM60N20TE

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Specifications

Gate Charge(Qg)23nC@4.5V
Configuration-
Drain to Source Voltage20V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)213pF
RDS(on)9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.563nF

Technical details

20V 60A 37W Surface Mount TO-252

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