PJSEMI · FETs & Power MOSFETs · MPN PJM60H02NTE
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 8.5nC |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 4.3Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 280pF |
| Type | N-Channel |
N-Channel 600V 2A 35W Surface Mount TO-252