PJSEMI PJM50C30DN

PJSEMI · FETs & Power MOSFETs · MPN PJM50C30DN

No reviews yet — be the first to review PJSEMI PJM50C30DN.

Specifications

Gate Charge(Qg)23nC@10V;22nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)158pF;265pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation18W;22W
RDS(on)8mΩ@10V;13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)129pF;215pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.3nF;1.488nF
TypeN-Channel + P-Channel

Technical details

30V 50A 2.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs