PJSEMI PJM40P40TE

PJSEMI · FETs & Power MOSFETs · MPN PJM40P40TE

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)35nC@10V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)212pF
RDS(on)17mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.053nF
TypeP-Channel

Technical details

P-Channel 40V 40A 40W Surface Mount TO-252

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