PJSEMI PJM30P60DN

PJSEMI · FETs & Power MOSFETs · MPN PJM30P60DN

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)25nC@4.5V
Output Capacitance(Coss)2.099nF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52.1W
Reverse Transfer Capacitance (Crss@Vds)1.285nF
RDS(on)25mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.805nF
TypeP-Channel

Technical details

60V 30A 2.5V 52.1W 25mΩ@10V 1 P-Channel P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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