PJSEMI PJM2310NSC

PJSEMI · FETs & Power MOSFETs · MPN PJM2310NSC

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Specifications

Gate Charge(Qg)14.6nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)105mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)510pF

Technical details

N-Channel 60V 4A 1W Surface Mount SOT-23-3

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