PJSEMI PJM20N60TE

PJSEMI · FETs & Power MOSFETs · MPN PJM20N60TE

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)20.3nC@10V
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation27.7W
RDS(on)33mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)1.18nF
TypeN-Channel

Technical details

N-Channel 60V 20A 27.7W Surface Mount TO-252

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