PJSEMI PJM20H05NTE

PJSEMI · FETs & Power MOSFETs · MPN PJM20H05NTE

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)2nC
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation40W
RDS(on)4Ω@2.5V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)80pF

Technical details

N-Channel 200V 5A 40W Surface Mount TO-252

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