PJSEMI PJM20H02ANSC

PJSEMI · FETs & Power MOSFETs · MPN PJM20H02ANSC

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W
RDS(on)1.9Ω@10V
Reverse Transfer Capacitance (Crss@Vds)4.6pF
Number1 N-channel
Input Capacitance(Ciss)900pF

Technical details

N-Channel 200V 2A 1.25W Surface Mount SOT-23-3

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