PJSEMI PJM180N30DN

PJSEMI · FETs & Power MOSFETs · MPN PJM180N30DN

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)108nC@10V
Current - Continuous Drain(Id)180A
Output Capacitance(Coss)841pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)445pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.424nF
TypeN-Channel

Technical details

30V 180A 2.5V 104W 2mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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