PJSEMI PJM150N30DN

PJSEMI · FETs & Power MOSFETs · MPN PJM150N30DN

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Specifications

Gate Charge(Qg)97nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)600pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)445pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.12nF
TypeN-Channel

Technical details

30V 150A 2.5V 89W 2.4mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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