PJSEMI PJM10N60SQ

PJSEMI · FETs & Power MOSFETs · MPN PJM10N60SQ

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.35W
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)59pF
Number1 N-channel
Input Capacitance(Ciss)973pF
TypeN-Channel

Technical details

N-Channel 60V 10A 1.35W Surface Mount SOT-89

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