PJSEMI · FETs & Power MOSFETs · MPN PJM10H15NTE
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 130mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.034nF |
N-Channel 100V 15A 46W Surface Mount TO-252