PJSEMI PJM10H10NSC

PJSEMI · FETs & Power MOSFETs · MPN PJM10H10NSC

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.2W
RDS(on)140mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)610pF

Technical details

N-Channel 100V 10A 1.2W Surface Mount SOT-23-3

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