PJSEMI · FETs & Power MOSFETs · MPN PJM10H06NSQ
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| Gate Charge(Qg) | 15.5nC@10V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.35W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 140mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 690pF |
100V 9A 1.35W Surface Mount SOT-89