PJSEMI · FETs & Power MOSFETs · MPN PJM10H06NSC
No reviews yet — be the first to review PJSEMI PJM10H06NSC.
| Gate Charge(Qg) | 15.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 140mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 690pF |
N-Channel 100V 9A 1.2W Surface Mount SOT-23-3