PJSEMI PJM10H03NSC

PJSEMI · FETs & Power MOSFETs · MPN PJM10H03NSC

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)20nC@10V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.5W
RDS(on)170mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 N-channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

N-Channel 100V 3A 1.5W Surface Mount SOT-23-3

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