PJSEMI PJM10H01PSA

PJSEMI · FETs & Power MOSFETs · MPN PJM10H01PSA

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Specifications

Gate Charge(Qg)4nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)650mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 100V 1A 0.5W Surface Mount SOT-23

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