PJSEMI · FETs & Power MOSFETs · MPN PJM100P40DN
No reviews yet — be the first to review PJSEMI PJM100P40DN.
| Gate Charge(Qg) | 118nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 545pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 58W |
| Reverse Transfer Capacitance (Crss@Vds) | 345pF |
| RDS(on) | 8mΩ@10V;11mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.638nF |
| Type | P-Channel |
40V 100A 2.5V 58W 1 P-Channel P-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS