PJSEMI PJM100N30TE

PJSEMI · FETs & Power MOSFETs · MPN PJM100N30TE

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)58nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)274pF
RDS(on)5.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.937nF

Technical details

N-Channel 30V 100A 78W Surface Mount TO-252

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