PJSEMI PJM09P30DF

PJSEMI · FETs & Power MOSFETs · MPN PJM09P30DF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)52nC@10V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)132pF
RDS(on)45mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.03nF
TypeP-Channel

Technical details

P-Channel 30V 9A 2W Surface Mount DFN2x2-6L

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