PJSEMI PJM09P20DF

PJSEMI · FETs & Power MOSFETs · MPN PJM09P20DF

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Specifications

Configuration-
Gate Charge(Qg)33.7nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3W
RDS(on)37mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)168pF
Number1 P-Channel
Input Capacitance(Ciss)1.2nF
TypeP-Channel

Technical details

P-Channel 20V 9A 3W Surface Mount DFN2x2-6L

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