PJSEMI PJM08N30DF

PJSEMI · FETs & Power MOSFETs · MPN PJM08N30DF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)27.5pF
RDS(on)29mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)625pF

Technical details

N-Channel 30V 8A 2W Surface Mount DFN2x2-6L

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