PJSEMI PJM08C30PA

PJSEMI · FETs & Power MOSFETs · MPN PJM08C30PA

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Specifications

Gate Charge(Qg)12.6nC@10V;12.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)65.2pF;105pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)54pF;65pF
RDS(on)31mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)485.8pF;650pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 8A 2W Surface Mount SOP-8

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