PJSEMI PJM04P30SQ

PJSEMI · FETs & Power MOSFETs · MPN PJM04P30SQ

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Specifications

Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)8.5nC@10V
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.3W
RDS(on)65mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)65pF
Number1 P-Channel
Input Capacitance(Ciss)880pF
TypeP-Channel

Technical details

P-Channel 30V 4.1A 1.3W Surface Mount SOT-89

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