PJSEMI PJM04P20SG

PJSEMI · FETs & Power MOSFETs · MPN PJM04P20SG

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Specifications

Gate Charge(Qg)13.1nC
Drain to Source Voltage20V
Output Capacitance(Coss)108pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.2W
RDS(on)39mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)94pF
Number1 P-Channel
Input Capacitance(Ciss)762pF
TypeP-Channel

Technical details

P-Channel 20V 4.1A 1.2W Surface Mount SOT-23-6

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