PJSEMI PJM03N60SQ

PJSEMI · FETs & Power MOSFETs · MPN PJM03N60SQ

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Specifications

Gate Charge(Qg)9nC@10V
Configuration-
Drain to Source Voltage60V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
RDS(on)110mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

N-Channel 60V 3A 1.5W Surface Mount SOT-89

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