PJSEMI PJM03N10SQ

PJSEMI · FETs & Power MOSFETs · MPN PJM03N10SQ

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Specifications

Gate Charge(Qg)15.5nC@10V
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.35W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)178mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)690pF
TypeN-Channel

Technical details

N-Channel 100V 3A 1.35W Surface Mount SOT-89

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