PJSEMI MMDT3906SG

PJSEMI · Transistors (BJTs) · MPN MMDT3906SG

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 1W Surface Mount SOT-23-6

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